ATF-36077 |
RFQ for ATF-36077 Required Field |
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| Technical/Catalog Information | ATF-36077-STR |
| Vendor | Avago Technologies US Inc. |
| Category | Discrete Semiconductor Products |
| Transistor Type | pHEMT FET |
| Voltage - Rated | 3V |
| Current Rating | 45mA |
| Package / Case | Surface Mount |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ATF 36077 STR ATF36077STR 516 1865 ND 5161865ND 516-1865 |
| Product | Manufacturers | Pack | D/C |
| ATF-36077 | - | SMT77 | 07+ |
Hewlett-Packard's ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. The premium sensitivity of the ATF-36077 makes this device the ideal choice for use in the first stage of extremely low noise cascades.
Typical Application |
Features |
| • 12 GHz DBS LNB (Low Noise Block)• 4 GHz TVRO LNB (Low Noise Block)• Ultra-Sensitive Low Noise Amplifiers | • PHEMT Technology• Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz• High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz• Low Parasitic Ceramic Microstrip Package• Tape-and-Reel Packing Option Available |
| Symbol | Parameter | Units | Absolute Maximum[1] |
| VDS | Drain Source Voltage | V | +3 |
| VGS | Gate Source Voltage | V | -3 |
| VGD | Gate-Drain Voltage | V | -3.5 |
| ID | Drain Current | mA | Idss |
| PT | Total Power Dissipation[3] | mW | 180 |
| Pin max | RF Input Power | dBm | +10 |
| Tch | Channel Temperature | °C | 150 |
| TSTG | Storage Temperature | °C | -65 to 150 |
